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This repository contains all the materials related to the basic MOSFET theory, CMOS technology, circuit and layout design, and basic PDK design.

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LaunchLab-Freshers-Training

This repository contains all the materials related to the basic MOSFET theory, CMOS technology, circuit and layout design, and basic PDK design.

Some Useful Videos on IC Design

Course Contents

Week-1: Pre-requisites

  • Fundamentals of RC Circuits: Test your understanding by solving assignments. Test: RC Circuits
  • Fundamentals of Digital Logic: Test your understanding by solving assignments. Test: Digital Logic Design
    • Reference Book: Digital Logic and Computer Design by M. Morris Mano. [Link]
  • Fundamentals of Electrical Circuits: Test your understanding by solving assignments. Test: Electrical Circuits
    • Reference Book: Fundamentals of Electrical Circuits by Alexander and Sadiku. [Link]
  • Fundamentals of Semiconductor Devices: Test your understanding by solving assignments. Test: Semiconductor Devices
  • Fundamentas of UNIX:
    • Practicing basic UNIX commands. [Link]
    • Practicing frequently used and advanced UNIX commands. [Link]
    • Practicing file editing commands. [Link]
    • Test your understanding by solving assignments. Test: comming soon

Week-2: Introduction to Digital Logic Circuit Design (Gate Level)

  • Logic Gates: Understanding of basic (NOT, AND, OR), universal (NAND, NOR) and special logic gates (X-OR,X-NOR).
  • Truth Table & K-Map: Draw the truth table and find out the logic circuit using K-Map (up to 5 variable).
  • Combinational Circuit: Draw the following circuits: Adders, Subtractors, Multiplexers, De-multiplexers, Decoders, Encoders and Code converters.
  • Sequential Circuits: Draw the following circuits: Latches, Flip-Flops, Resisters, Counters and FSM.
    • Understanding the concept of setup time. hold time, removal time, recovery time etc.
  • Misc.: Multiplexer and Decoder based logic circuit design, Edge detector circuit design.
  • Logic States: Understanding the loging states and their relevances: 1, 0, X, Z.
  • Timing Diagram: Understanding the timing diagram of all the combi and sequential logic circuits.
  • Reference Book: Digital Logic and Computer Design by M. Morris Mano. [Link]

Week-3: Basics of CMOS VLSI Design

  • Introduction: Fundamentals of VLSI Design and overview of Sand-to-Silicon.
  • IC Design Flow: Overview of Digital and Custom IC Design Flow and requirement of Computer Aided Design (CAD) Tools and Process Design Kit (PDK).
    • Digital IC Flow: Spec --> RTL --> RTL Verification --> Gate-level synthesis --> Gate-level simulation --> Physical Design --> Physical Verification --> parasitic extraction --> Post-layout verification.
    • Custom IC Flow (Analog IC Design): Spec --> Circuit Design --> Circuit Simulation --> Layout Design --> Layout Verification --> Parasitic Extraction --> Post-layout Simulation. [Notes]
    • Requirements of the different CAD tools and PDK in different phase of the IC Design Flow. [Notes]
  • IC manufacturing process: [Link]
    • Difference between Sub-micron, deep sub-micron and ultra-deep sub-micron process.
    • Detailed understanding of sub-micron process.
    • Passive IC devices and its fabrication: Resistor and Capacitor
    • MOSFET and CMOS Inverter fabrication process, cross-sectional view, top view and 3D view.

Week-4: Fundamentals of MOSFET

  • MOS Structure: Understanding of Metal-Oxide-Semiconductor structure || understanding of accumulation, depletion and inverssion region of operation || understanding of Q-V and C-V characteristics of MOS structure.
  • MOSFET: Understanding of Metal-Oxide-Field-Effect-Transistor (MOSFET), working principle, regions of operation, Id-Vgs and Id-Vds characteristics, Body effects, Channel length modulations and intrinisic capacitances.
    • Metal Oxide Semiconductor Field Effect Transistor-1 [Notes] || [Video]
    • Metal Oxide Semiconductor Field Effect Transistor-2 [Notes] || [Video]
  • MOSFET Capacitance: Understanding of different intrinsic capacitances (overlap capacitance, channel capacitance, junction capacitance) of a MOSFET
  • Short Channel Effects: Understanding of MOSFET scaling and differenct short channel effects: Drain induced barrier lowering (DIBL), Velocity Saturation, Mobility degradaton, Hot carrier effects and Impact ionisation.
  • Asignment: Assignment-2: MOSFET with Capacitor

Week-5: Circuit Simulaton using CAD tools

  • Circuit Simulation Understanding of schematic drawing, SPICE net-list, model file and circuit simulation.
  • Simulation Types Different type of Simulations: Operating point, DC, Transient and AC.
    • Schematic Drawing and Symbol Creation
    • DC Simulation
    • Transient Simulation
  • MOSFET Characterization: Simple circuit design using NMOSFET and PMOSFET to characterize Id-Vgs and Id-Vds curves with PVT variations.
  • Parameter Extraction: Extraction of the simple level-1 parameters (VT0, KP, LAMDA, GAMMA, PHI) from the curve and comparing the results using Level-1 model and BSIM model.
  • PVT Variation: Understanding of Process, Voltage and Temperature (PVT) variation
  • Sensitivity and mismatch analysis: Understanding the random variation and mismatch analysis by Monte Carlo simulations.
  • Parametric simulation: Parametric analysis and circuit simulation using ADE-XL

Week-6: CMOS Inverter Design

  • CMOS inverter: Understanding of CMOS inverter design, CMOS advantages, static characteristics, dynamic characteristics, power and energy consumptions.
  • Interconnect Parasitics: Understanding the wiring capacitance: parallel plate capacitance, coupling capacitance, fringing capacitance and different capacitance models.
  • Inverter Chain: Understanding of Inverter chain design to drive a higher capacitive load || Understanding of number of stages ans stage ratio || Understanding of optimal delay.
  • Design and Simulation: Design, simulation and charactrization all of the above.

Week-7: Other Combinational and Sequential Circuit Design

  • Other Combi: Design other combinational logics like, NAND gate, NOR gate, MUX and transmission gates.
  • Sequential Logic Circuits: Understanding of latch and flip-flop design || understanding of setup, hold and propagation time
  • Static Timing Analysis (STA) [Slides] || [Notes]
    • Delays, timing arc, timing paths, setup and hold constraints, setup and hold time violations, recovery and remova time and its violations
  • Assignments: Assignment-1

Week-8: Layout Design

  • Layout Basics: Layer details (Metal, poly, diffusion, OD, N-Well, P-substrate, P+ Diff, N+ Diff, Via, Contact, Ports and Lable etc) || Layer drawing, layer interacting and, port and label creating || Layout Design of NMOS and PMOS
  • Layout Design of Inverter: Undestanding of Design Rule Check (DRC) || Understanding of Layout Vs Schematic (LVS) || Understanding of Parasic Extraction (PEX) || Understanding of Post Layout Simulation (PLS)
  • Other Layouts: Layout Design of NAND and NOR Gates || Layout Design of Resistors, Capacitors and BJTs
  • DRC, LVS and PEX in details: DRC Rule deck file and different rules || LVS rule deck file || PEX rule deck file || Basics of P-Cell
  • Asignment and aassessment:

Session Activities

  • [Nov-8] Introduction to CMOS VLSI Design Flow [Video]
    • [Suggested Reading]: [Hodges] Chapter-1, [Kang] Chapter-1
  • [Nov-9] Introduction to CMOS PRocessing [Video]
    • [Suggested Reading]: [Hodges] Section 3.1,3.2
    • [Suggested Problems]: [Hodges] Prob 3.11, 3.12
  • [Nov-10] Session-1: Passive Integrated Circuit Devices. Session-2: MOS Device-I: Threshold Voltage [Video:Session-1 | Video:Session-2]
    • [Suggested Reading]: [Hodges] Section 3.2.4, 3.2.5
    • [Suggested Problems]: [Hodges] Example 3.1, Prob 3.13, 3.14
  • [Nov-11] Session-1: MOS Device-II: IV Characteristics and MOS Capacitance. Session-2: Basic Circuits. [Video:Session-1 | Video:Session-2]
    • [Suggested Reading]: [Hodges] Section 2.2.1, 2.2.2, 2.2.3, 2.2.7 [Kang]: Chapter 3 [Uyemura] Section 1.1, 1.2 (Excellent treatment on Vt) [Baker]: Section 6.1, 6.2, 6.3
    • [Suggested Problems]: [Hodges] Example 2.1,2.2,2.3,2.4,2.5,2.11, Prob. 2.1,2.4,2.5,2.7,2.8
    • [Additional Materials]: MOSFET Capacitance [Notes] || [Video]
  • [Nov-12] Session-1 Modeling of MOS Device for Circuit Simulation. Session-2: Introduction to Lab on Cloud. Session-3: Parameter Extraction. MOS Problem discussion. [Video: Session-1 | Session-2 | Session-3]
    • [Suggested Reading]: [Hodges] Section 3.4, 3.5, 3.6, Appendix-A, NGSpice Manual
    • [Lab Assignment] MOS Parameter extraction and MOS Level-1 Modeling Link-to-PDK
  • [Nov-13] Session-1: Intorduction to Linux. Session-2: Lab-1 -- Parameter extraction. [Video: Session-1 | Session-2]
    • [Assignment] Session-1: Solving problems related MOS Device. Session-2: Lab-2 Parameter extraction (contd.) [Video: Session-1 | Session-2]

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This repository contains all the materials related to the basic MOSFET theory, CMOS technology, circuit and layout design, and basic PDK design.

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